Top 100 US Patents in Semiconductors
section h - electricity > basic electric elements > semiconductor devices; electric solid state devices not otherwise provided for
Sorted by IPQ® Score, an objective measure of patent quality. View scores and methodology at PatentRatings.com. You can also view all by publication date instead.
US5661053 (A), filed
Wed May 25 00:00:00 CDT 1994
, published
Tue Aug 26 00:00:00 CDT 1997
- SANDISK CORP
Techniques of forming a flash EEPROM cell array with the size of individual cells being reduced, thereby increasing the number of cells which may be formed on a semiconductor substrate of a given size. Use of dielectric spacers in several steps of the process...
US4461819 (A), filed
Wed Jun 03 00:00:00 CDT 1981
, published
Tue Jul 24 00:00:00 CDT 1984
- CANON KK
Image-forming member for electrophotography comprising a charge generation layer composed of hydrogenated amorphous silicon.
US6451643 (B2), filed
Tue Jun 05 00:00:00 CDT 2001
, published
Tue Sep 17 00:00:00 CDT 2002
- HITACHI LTD
A method of manufacturing a semiconductor memory device having nonvolatile memory cells each formed of a MISFET having both a floating gate and a control gate and first and second semiconductor regions. By this method, an impurity, for example, arsenic, is...
US5140389 (A), filed
Mon Feb 05 00:00:00 CST 1990
, published
Tue Aug 18 00:00:00 CDT 1992
- HITACHI LTD
A semiconductor memory device having STC cells wherein the major portions of active regions consisting of channel-forming portions are inclined at an angle of 45 degrees with respect to word lines and bit lines that meet at right angles with each other,...
US5583347 (A), filed
Mon Mar 13 00:00:00 CST 1995
, published
Tue Dec 10 00:00:00 CST 1996
- SEIKO EPSON CORP
An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source...
US5801441 (A), filed
Mon May 15 00:00:00 CDT 1995
, published
Tue Sep 01 00:00:00 CDT 1998
- TESSERA INC
A microelectronic connection component includes a dielectric sheet having an area array of elongated, strip-like leads. Each lead has a terminal end fastened to the sheet and a tip end detachable from the sheet. Each lead extends horizontally parallel to the...
US7129113 (B1), filed
Fri Oct 22 00:00:00 CDT 2004
, published
Tue Oct 31 00:00:00 CST 2006
- BRIDGE SEMICONDUCTOR CORP
A method of making a three-dimensional stacked semiconductor package includes providing a first semiconductor chip assembly that includes a first chip, a first conductive trace and a first encapsulant, wherein the first conductive trace includes a first metal...
US7229572 (B2), filed
Mon Dec 08 00:00:00 CST 2003
, published
Tue Jun 12 00:00:00 CDT 2007
- CABOT CORP
Photoluminescent phosphor powders and a method for making phosphor powders. The phosphor powders have a small particle size, narrow particle size distribution and are substantially spherical. The method of the invention advantageously permits the economic...
US5500081 (A), filed
Mon Dec 05 00:00:00 CST 1994
, published
Tue Mar 19 00:00:00 CST 1996
Disclosed is a method for improved processing of semiconductor wafers and the like using processing chemicals, particularly hydrofluoric acid (HF) and water mixtures. Homogeneous vapor mixtures are generated from homogeneous liquid phase mixtures which are...
US4833095 (A), filed
Fri Dec 04 00:00:00 CST 1987
, published
Tue May 23 00:00:00 CDT 1989
- EATON CORP
The fabrication of high performance and reliable Buried Channel Field Effect Transistor (BCFET) using Schottky gate junction and heavily doped N layers for the source and drain electrode is described. The BCFET is composed of a semi-insulating substrate in...
US4472792 (A), filed
Thu May 13 00:00:00 CDT 1982
, published
Tue Sep 18 00:00:00 CDT 1984
- HITACHI LTD
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of...
US7253051 (B2), filed
Fri Dec 09 00:00:00 CST 2005
, published
Tue Aug 07 00:00:00 CDT 2007
- RENESAS TECH CORP
A SRAM of complete CMOS type having its memory cell composed of six MISFETs, in which a pair of local wiring lines for connecting the input/output terminals of CMOS inverters are formed of a refractory metal silicide layer formed over a first conducting layer...
US6762924 (B2), filed
Tue Dec 17 00:00:00 CST 2002
, published
Tue Jul 13 00:00:00 CDT 2004
- MICRON TECHNOLOGY INC
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode having a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the...
US7195976 (B2), filed
Mon May 24 00:00:00 CDT 2004
, published
Tue Mar 27 00:00:00 CDT 2007
- RENESAS TECH CORP
A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a...
US5793099 (A), filed
Tue May 07 00:00:00 CDT 1996
, published
Tue Aug 11 00:00:00 CDT 1998
- HITACHI LTD
As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip"...
US7071089 (B1), filed
Sat Nov 27 00:00:00 CST 2004
, published
Tue Jul 04 00:00:00 CDT 2006
- BRIDGE SEMICONDUCTOR CORP
A method of making a semiconductor chip assembly includes providing a metal base, a routing line, a bumped terminal and a metal filler, then mechanically attaching a semiconductor chip to the metal base, the routing line, the bumped terminal and the metal...
US5629549 (A), filed
Fri Apr 21 00:00:00 CDT 1995
, published
Tue May 13 00:00:00 CDT 1997
A new magnetic spin transistor is provided. This spin transistor can be used as a memory element or logic gate, such as an OR, AND, NOT, NOR and NAND gate. The state of the magnetic spin transistor logic gate is set inductively. This new magnetic spin...
US6531730 (B2), filed
Tue Jul 27 00:00:00 CDT 1999
, published
Tue Mar 11 00:00:00 CST 2003
- MICRON TECHNOLOGY INC
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is...
US6555399 (B1), filed
Fri May 17 00:00:00 CDT 1996
, published
Tue Apr 29 00:00:00 CDT 2003
- MICRON TECHNOLOGY INC
A method for forming a semiconductor component comprises packaging a plurality of semiconductor die into one component. Present designs comprise multiple unpackaged die which have been probed, but not rigorously tested for complete functionality and adherence...
US6124625 (A), filed
Thu Aug 21 00:00:00 CDT 1997
, published
Tue Sep 26 00:00:00 CDT 2000
- MICRON TECHNOLOGY INC
An extensive network of N-channel transistor formed capacitor, with one node tie directly to VCC power bus and the other node directly VSS power bus, is implemented throughout all open space available on the whole silicon chip (memory as well as logic chip),...
US5369295 (A), filed
Wed Nov 18 00:00:00 CST 1992
, published
Tue Nov 29 00:00:00 CST 1994
- THUNDERBIRD TECH INC
An improved Fermi FET structure with low gate and diffusion capacity allows conduction carriers to flow within the channel at a predetermined depth in the substrate below the gate, without requiring an inversion layer to be created at the surface of the...
US6448628 (B2), filed
Thu Jan 27 00:00:00 CST 2000
, published
Tue Sep 10 00:00:00 CDT 2002
- MICRON TECHNOLOGY INC
An extensive network of N-channel transistor formed capacitor, with one node tie directly to VCC power bus and the other node directly VSS power bus, is implemented throughout all open space available on the whole silicon chip (memory as well as logic chip),...
US4492810 (A), filed
Fri Nov 19 00:00:00 CST 1982
, published
Tue Jan 08 00:00:00 CST 1985
- SOVONICS SOLAR SYSTEMS
The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like. The alloys and devices have improved wavelength threshold characteristics made possible by introducing one or more band gap...
US5478772 (A), filed
Fri Feb 17 00:00:00 CST 1995
, published
Tue Dec 26 00:00:00 CST 1995
- MICRON TECHNOLOGY INC
The invention is a storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the...
US7112521 (B1), filed
Sat Nov 27 00:00:00 CST 2004
, published
Tue Sep 26 00:00:00 CDT 2006
- BRIDGE SEMICONDUCTOR CORP
A method of making a semiconductor chip assembly includes providing a metal base, a routing line and a bumped terminal, then mechanically attaching a semiconductor chip to the metal base, the routing line and the bumped terminal, then forming an encapsulant,...
US5242844 (A), filed
Tue Jan 22 00:00:00 CST 1991
, published
Tue Sep 07 00:00:00 CDT 1993
- SONY CORP
A polycrystalline silicon layer is used to allow simultaneous fabrication of both N- and P-type MOSFET's on a common channel layer during integrated circuit fabrication. The polysilicon layer is between 20 ANGSTROM and 750 ANGSTROM thick, and preferably...
US5397715 (A), filed
Thu Oct 21 00:00:00 CDT 1993
, published
Tue Mar 14 00:00:00 CST 1995
- MICREL INC
A process is described for providing a self-aligned MOS transistor having a selectable gate-drain capacitance. In a self-aligned process for forming a PMOS transistor, a polysilicon layer is etched to expose portions of an n-type substrate in which it is...
US5534711 (A), filed
Wed Apr 19 00:00:00 CDT 1995
, published
Tue Jul 09 00:00:00 CDT 1996
- ENERGY CONVERSION DEVICES INC
The present invention comprises an electrically operated, directly overwritable, multibit, single-cell memory element. The memory element includes a volume of memory material which defines the single cell memory element. The memory material is characterized...
US6650409 (B1), filed
Thu Mar 14 00:00:00 CST 1996
, published
Tue Nov 18 00:00:00 CST 2003
- HITACHI LTD
A semiconductor device producing method and a semiconductor device producing system employs a processing apparatus provided with a dust particle detecting apparatus. The dust particle detecting apparatus measures the condition of adhesion of dust particles...
US7253052 (B2), filed
Thu Jul 22 00:00:00 CDT 2004
, published
Tue Aug 07 00:00:00 CDT 2007
- MICRON TECHNOLOGY INC
Described are integrated circuit electrodes and method for fabricating an electrode, which include, in an embodiment forming a silicon, first portion of the electrode in a lower region of a substrate opening. The method may further include forming a second...
US5447409 (A), filed
Mon Apr 11 00:00:00 CDT 1994
, published
Tue Sep 05 00:00:00 CDT 1995
- APPLIED MATERIALS INC
A robot assembly, including a central hub, has two arms arranged for independent rotation about the hub. Two carriers, oriented 180 DEG apart from each other, are coupled to an end of each of the arms. A drive is provided for rotating the arms in opposite...
US5966341 (A), filed
Tue Dec 02 00:00:00 CST 1997
, published
Tue Oct 12 00:00:00 CDT 1999
- HITACHI LTD
A semiconductor memory such as a dynamic RAM having memory mats each divided into a plurality of units or sub-memory mats. Each sub-memory mat comprises: a memory array having sub-word lines and sub-bit lines intersecting orthogonally and dynamic memory cells...
US6287990 (B1), filed
Tue Sep 29 00:00:00 CDT 1998
, published
Tue Sep 11 00:00:00 CDT 2001
- APPLIED MATERIALS INC
A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier...
US5679983 (A), filed
Wed May 31 00:00:00 CDT 1995
, published
Tue Oct 21 00:00:00 CDT 1997
- TOKYO SHIBAURA ELECTRIC CO
This is a highly purified metal comprising one metal selected from the group consisted of titanium, zirconium and hafnium. The highly purified metal has an Al content of not more than 10 ppm. It also has an oxygen content of more than 250 ppm, each of Fe, Ni...
US5792304 (A), filed
Fri Sep 16 00:00:00 CDT 1994
, published
Tue Aug 11 00:00:00 CDT 1998
- HITACHI LTD
In a method of a holding substrate and a substrate holding system, the amount of foreign substances on the back surface of the substrate can be decreased, and only a small amount of foreign substances transferred from a mounting table to the substrate. For...
US7192803 (B1), filed
Mon Mar 31 00:00:00 CST 2003
, published
Tue Mar 20 00:00:00 CDT 2007
- BRIDGE SEMICONDUCTOR CORP
A method of making a semiconductor chip assembly includes providing a semiconductor chip, a metal base, an insulative base and a routing line, wherein the chip includes a conductive pad, the metal base is disposed on a side of the insulative base that faces...
US5132820 (A), filed
Fri Jun 10 00:00:00 CDT 1988
, published
Tue Jul 21 00:00:00 CDT 1992
- HITACHI LTD
There are disclosed various types of TFT active matrix liquid crystal display devices in which a pixel is divided into three parts, a capacitor is added to each pixel, light shielding is applied to each TFT, and the matrix is driven by a DC cancelling...
US5166758 (A), filed
Fri Jan 18 00:00:00 CST 1991
, published
Tue Nov 24 00:00:00 CST 1992
- ENERGY CONVERSION DEVICES INC
US6097073 (A), filed
Mon Aug 21 00:00:00 CDT 1995
, published
Tue Aug 01 00:00:00 CDT 2000
- LSI LOGIC CORP
Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other...
US5199701 (A), filed
Mon Oct 29 00:00:00 CST 1990
, published
Tue Apr 06 00:00:00 CDT 1993
- CASIO COMPUTER CO LTD
This carrier apparatus employs an ultrasonic actuator comprising a piezoelectric actuator made of a piezoelectric element which extends and contracts in the radial direction of a cylindrical vibrator in the inner space of the cylindrical vibrator as a power...
USRE36614 (E), filed
Fri Jul 17 00:00:00 CDT 1998
, published
Tue Mar 14 00:00:00 CST 2000
- INFINEON TECHNOLOGIES CORP
Processing techniques for various surface mount modular components provide various structures for single device components (10) and multiple device components (FIGS. 6 and 7) suitable as character displays. The technique beings with a slab of substrate...
US5959327 (A), filed
Thu Dec 14 00:00:00 CST 1995
, published
Tue Sep 28 00:00:00 CDT 1999
- MICRON TECHNOLOGY INC
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is...
US6777282 (B2), filed
Mon Jun 10 00:00:00 CDT 2002
, published
Tue Aug 17 00:00:00 CDT 2004
- RENESAS TECH CORP
A semiconductor memory device having nonvolatile memory cells each formed of a MISFET having both a floating gate and a control gate and first and second semiconductor regions serving as the source and drain regions, respectively. In accordance with the method...
US6989228 (B2), filed
Tue Jul 31 00:00:00 CDT 2001
, published
Tue Jan 24 00:00:00 CST 2006
- HITACHI LTD
Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample...
US4368098 (A), filed
Fri Apr 07 00:00:00 CST 1978
, published
Tue Jan 11 00:00:00 CST 1983
- ROCKWELL INTERNATIONAL CORP
An epitaxial composite comprising a thin film of single crystal Group III-V wide band-gap compound semiconductor or semiconductor alloy on single crystal, electrically insulating oxide substrates such as sapphire, spinel, BeO, ThO2, or the like, and on III-V...
US6222762 (B1), filed
Thu Aug 07 00:00:00 CDT 1997
, published
Tue Apr 24 00:00:00 CDT 2001
- SANDISK CORP
Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on...
US5304816 (A), filed
Wed Nov 25 00:00:00 CST 1992
, published
Tue Apr 19 00:00:00 CDT 1994
- AT T BELL LAB
The disclosed heterojunction bipolar transistor, to be referred to as the "coherent" transistor (CT), is capable of providing gain above the conventionally defined cut-off frequencies fT and fmax. Substantially, mono-energetic (average energy (Delta)) carriers...
US7282457 (B2), filed
Fri Mar 02 00:00:00 CST 2001
, published
Tue Oct 16 00:00:00 CDT 2007
- MICRON TECHNOLOGY INC
A method and apparatus for preventing NSUB2/SUBO from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace is disclosed. The method and apparatus utilize a catalyst to catalytically disassociate NSUB2/SUBO as...
US4895810 (A), filed
Tue May 17 00:00:00 CDT 1988
, published
Tue Jan 23 00:00:00 CST 1990
- ADVANCED POWER TECHNOLOGY
A dopant-opaque layer of polysilicon is deposited on gate oxide on the upper substrate surface to serve as a pattern definer during fabrication of the device. It provides control over successive P and N doping steps used to create the necessary operative...
US6487106 (B1), filed
Fri Feb 11 00:00:00 CST 2000
, published
Tue Nov 26 00:00:00 CST 2002
- UNIV ARIZONA
A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by...
US4274012 (A), filed
Wed Jan 24 00:00:00 CST 1979
, published
Tue Jun 16 00:00:00 CDT 1981
- XICOR INC
Nonvolatile semiconductor electrically-alterable, floating-gate memory methods and devices which utilize substrate coupling for self-regulated, tunnel-current-shaping to provide improved device characteristics. The substrate coupling also facilitates the cell...
US5235995 (A), filed
Wed Mar 06 00:00:00 CST 1991
, published
Tue Aug 17 00:00:00 CDT 1993
- SEMITOOL INC
Disclosed are apparatuses and methods for improved processing of semiconductor wafers and the using vapor phase processing chemicals, particularly aqueous hydrofluoric acid etchants. Homogeneous vapor mixtures are generated from homogeneous liquid mixtures....
US4761768 (A), filed
Mon Mar 04 00:00:00 CST 1985
, published
Tue Aug 02 00:00:00 CDT 1988
- LATTICE SEMICONDUCTOR CORP
An improved programmable logic device (PLD) is disclosed which employs electrically erasable memory cells which can be programmed and erased at high speed. The PLD memory cells comprise floating gate transistors as the storage elements, which are programmed...
US5266508 (A), filed
Mon Aug 24 00:00:00 CDT 1992
, published
Tue Nov 30 00:00:00 CST 1993
- SHARP KK
A process for manufacturing a semiconductor device which comprises the following steps of (i) forming a first insulating film on the whole surface of a semiconductor substrate having thereon a thin conductive layer with an intervening gate insulating film,...
US6375741 (B2), filed
Tue May 23 00:00:00 CDT 2000
, published
Tue Apr 23 00:00:00 CDT 2002
A semiconductor processor for spray coating wafers or other semiconductor articles. The processor has a compartment in which are mounted a wafer transfer, coating station and thermal treatment station. The coating station has a spray processing vessel in which...
US4782372 (A), filed
Thu Feb 26 00:00:00 CST 1987
, published
Tue Nov 01 00:00:00 CST 1988
- TOKYO SHIBAURA ELECTRIC CO
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type...
US5537666 (A), filed
Fri Oct 07 00:00:00 CDT 1994
, published
Tue Jul 16 00:00:00 CDT 1996
- SEIKO EPSON COROPRATION
In order to manufacture a surface emission type semiconductor laser, a plurality of semiconductor layers including a multilayered semiconductor mirror, a cladding layer, an active layer and other layers are sequentially formed on a substrate through the...
US7402489 (B2), filed
Tue Aug 30 00:00:00 CDT 2005
, published
Tue Jul 22 00:00:00 CDT 2008
- MICRON TECHNOLOGY INC
A storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode including a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie...
US5989943 (A), filed
Fri Dec 08 00:00:00 CST 1989
, published
Tue Nov 23 00:00:00 CST 1999
- QUICKLOGIC CORP
In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous silicon film is deposited using plasma enhanced chemical vapor...
US5605662 (A), filed
Mon Nov 01 00:00:00 CST 1993
, published
Tue Feb 25 00:00:00 CST 1997
- NANOGEN INC
A self-addressable, self-assembling microelectronic device is designed and fabricated to actively carry out and control multi-step and multiplex molecular biological reactions in microscopic formats. These reactions include nucleic acid hybridization,...
US6338809 (B1), filed
Tue Feb 24 00:00:00 CST 1998
, published
Tue Jan 15 00:00:00 CST 2002
- SUPERIOR MICROPOWDERS LLC
Provided is an aerosol method, and accompanying apparatus, for preparing powdered products of a variety of materials involving the use of an ultrasonic aerosol generator (106) including a plurality of ultrasonic transducers (120) underlying and ultrasonically...
US6150628 (A), filed
Thu Jun 26 00:00:00 CDT 1997
, published
Tue Nov 21 00:00:00 CST 2000
- APPLIED SCIENCE TECH INC
An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primarily winding. The apparatus also includes one or...
US5583457 (A), filed
Tue Feb 08 00:00:00 CST 1994
, published
Tue Dec 10 00:00:00 CST 1996
- HITACHI LTD
A semiconductor integrated circuit device is composed of logic gates each provided with at least two MOS transistors. The logic gates are connected to a first potential point and a second potential point. The semiconductor integrated circuit device includes a...
US5929466 (A), filed
Fri Jun 13 00:00:00 CDT 1997
, published
Tue Jul 27 00:00:00 CDT 1999
- TOKYO SHIBAURA ELECTRIC CO
A semiconductor device comprises a single crystal substrate, a nucleus formation buffer layer formed on the single crystal substrate, and a lamination layer including a plurality of Al1-x-yGaxInyN (0/=x/=1, 0/=y/=1, x+y/=1) layers laminated above the nucleus...
US4892753 (A), filed
Wed Oct 26 00:00:00 CDT 1988
, published
Tue Jan 09 00:00:00 CST 1990
- APPLIED MATERIALS INC
A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either...
US7354811 (B2), filed
Wed Aug 11 00:00:00 CDT 2004
, published
Tue Apr 08 00:00:00 CDT 2008
- SEMICONDUCTOR ENERGY LAB
A semiconductor device comprising at least two thin film transistors on a substrate having an insulating surface thereon, provided that the thin film transistors are isolated by oxidizing the outer periphery of the active layer of each of the thin film...
US6271066 (B1), filed
Fri Jul 23 00:00:00 CDT 1993
, published
Tue Aug 07 00:00:00 CDT 2001
- SEMICONDUCTOR ENERGY LAB
A semiconductor material and a method for forming the same, said semiconductor material having fabricated by a process comprising irradiating a laser beam or a high intensity light equivalent to a laser beam to an amorphous silicon film containing therein...
US5965913 (A), filed
Fri Apr 18 00:00:00 CDT 1997
, published
Tue Oct 12 00:00:00 CDT 1999
- SANDISK CORP
A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide...
US6673637 (B2), filed
Thu Sep 20 00:00:00 CDT 2001
, published
Tue Jan 06 00:00:00 CST 2004
- KLA TENCOR TECHNOLOGIES
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection...
US4277881 (A), filed
Fri May 26 00:00:00 CDT 1978
, published
Tue Jul 14 00:00:00 CDT 1981
- ROCKWELL INTERNATIONAL CORP
A process for producing VLSI (very large scale integrated) circuits employs techniques of self-aligned gates and contacts for FET devices and for both diffused conducting lines in the substrate and polysilicon conducting lines situated on isolating field oxide...
US4539658 (A), filed
Wed Aug 08 00:00:00 CDT 1984
, published
Tue Sep 03 00:00:00 CDT 1985
- HITACHI LTD
A dynamic RAM integrated circuit of the one-element memory cell type is provided with a plurality of data lines, a sense amplifier, a plurality of word lines disposed in a manner to intersect with the data lines, and memory cells disposed at the points of...
US6633831 (B2), filed
Thu Sep 20 00:00:00 CDT 2001
, published
Tue Oct 14 00:00:00 CDT 2003
- KLA TENCOR TECHNOLOGIES
Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection...
US6693821 (B2), filed
Thu Jun 28 00:00:00 CDT 2001
, published
Tue Feb 17 00:00:00 CST 2004
- SHARP LAB OF AMERICA INC
Low cross talk resistive cross point memory devices are provided, along with methods of manufacture and use. The memory device comprises a bit formed using a perovskite material interposed at a cross point of an upper electrode and lower electrode. Each bit...
US7198969 (B1), filed
Thu Sep 07 00:00:00 CDT 2000
, published
Tue Apr 03 00:00:00 CDT 2007
- TESSERA INC
Semiconductor chip assemblies incorporating flexible, sheet-like elements having terminals thereon overlying the front or rear face of the chip to provide a compact unit. The terminals on the sheet-like element are movable with respect to the chip, so as to...
US5374836 (A), filed
Tue Feb 23 00:00:00 CST 1993
, published
Tue Dec 20 00:00:00 CST 1994
- THUNDERBIRD TECH INC
A high current Fermi-FET includes an injector region of the same conductivity type as the Fermi-Tub region and the source and drain regions, located adjacent the source region and facing the drain region. The injector region is preferably doped at a doping...
US4809152 (A), filed
Tue May 12 00:00:00 CDT 1987
, published
Tue Feb 28 00:00:00 CST 1989
- MAXIM INTEGRATED PRODUCTS
A monolithic integrated circuit containing an inverting/non-inverting voltage doubler charge pump circuit is disclosed for converting a unipolar supply voltage to a bipolar supply voltage of a greater magnitude. The unipolar input voltage is placed across a...
US6815344 (B2), filed
Thu Jan 31 00:00:00 CST 2002
, published
Tue Nov 09 00:00:00 CST 2004
- MICRON TECHNOLOGY INC
A method of forming a crystalline phase material includes, a) providing a stress inducing material within or operatively adjacent a crystalline material of a first crystalline phase; and b) annealing the crystalline material of the first crystalline phase...
US6030847 (A), filed
Thu Dec 14 00:00:00 CST 1995
, published
Tue Feb 29 00:00:00 CST 2000
- MICRON TECHNOLOGY INC
The invention is a storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the...
US6846738 (B2), filed
Wed Mar 13 00:00:00 CST 2002
, published
Tue Jan 25 00:00:00 CST 2005
- MICRON TECHNOLOGY INC
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically...
US6983536 (B2), filed
Tue May 18 00:00:00 CDT 2004
, published
Tue Jan 10 00:00:00 CST 2006
- MICRON TECHNOLOGY INC
A method and apparatus for fabricating known good semiconductor dice are provided. The method includes the steps of: testing the gross functionality of dice contained on a semiconductor wafer; sawing the wafer to singulate a die; and then testing the die by...
US6407434 (B1), filed
Mon Aug 21 00:00:00 CDT 1995
, published
Tue Jun 18 00:00:00 CDT 2002
- LSI LOGIC CORP
Several inventions are disclosed. A cell architecture using hexagonal shaped cells is disclosed. The architecture is not limited to hexagonal shaped cells. Cells may be defined by clusters of two or more hexagons, by triangles, by parallelograms, and by other...
US6864201 (B2), filed
Wed Jun 13 00:00:00 CDT 2001
, published
Tue Mar 08 00:00:00 CST 2005
- SYMYX TECHNOLOGIES INC
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to...
US5712180 (A), filed
Wed Feb 28 00:00:00 CST 1996
, published
Tue Jan 27 00:00:00 CST 1998
- SUNDISK CORP
Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In...
US5814869 (A), filed
Fri Jul 21 00:00:00 CDT 1995
, published
Tue Sep 29 00:00:00 CDT 1998
- THUNDERBIRD TECH INC
A Fermi-threshold field effect transistor includes spaced-apart source and drain regions which extend beyond the Fermi-tub in the depth direction and which may also extend beyond the Fermi-tub in the lateral direction. In order to compensate for the junction...
US4409605 (A), filed
Wed Sep 29 00:00:00 CDT 1982
, published
Tue Oct 11 00:00:00 CDT 1983
- ENERGY CONVERSION DEVICES INC
An amorphous semiconductor body, most advantageously a glow discharge deposited silicon-containing host matrix film, is provided containing at least fluorine as a compensating or altering agent, and most preferably at least one complementary compensating or...
US6617242 (B1), filed
Wed Jun 07 00:00:00 CDT 1995
, published
Tue Sep 09 00:00:00 CDT 2003
- ST MICROELECTRONICS INC
A method for fabricating interlevel contacts in semiconductor integrated circuits provides for formation of a contact opening through an insulating layer. A layer of refractory metal, or refractory metal alloy, is deposited over the surface of the integrated...
US7067070 (B2), filed
Fri Sep 26 00:00:00 CDT 2003
, published
Tue Jun 27 00:00:00 CDT 2006
- CABOT CORP
Electroluminescent phosphor powders and a method for making phosphor powders. The phosphor powders have a small particle size, narrow particle size distribution and are substantially spherical. The method of the invention advantageously permits the economic...
US5284779 (A), filed
Mon Jul 20 00:00:00 CDT 1992
, published
Tue Feb 08 00:00:00 CST 1994
- SEMICONDUCTOR ENERGY LAB
Superconducting or conducting organic charge-transfer complex film is epitaxially grown on a substrate which has been given an oriented surface by applying a stearic acid film. The periodic charge distribution over the oriented surface regulates the formation...
US4916511 (A), filed
Fri Jan 06 00:00:00 CST 1989
, published
Tue Apr 10 00:00:00 CDT 1990
- TEXAS INSTRUMENTS INC
A plasma dry etch process for etching deep trenches in single crystal silicon material with controlled wall profile, for trench capacitors or trench isolation structures. HCl is used as an etchant under RIE conditions with a SiO2 hard mask. The SiO2 hard mask...
US5565695 (A), filed
Thu Jun 22 00:00:00 CDT 1995
, published
Tue Oct 15 00:00:00 CDT 1996
A new nonvolatile hybrid memory cell is provided. The cell is comprised of a magnetic spin transistor storage element and one or two FET isolation elements. The magnetic spin transistor stores data indefinitely while drawing zero quiescent power. The FET is...
US5007981 (A), filed
Fri Feb 09 00:00:00 CST 1990
, published
Tue Apr 16 00:00:00 CDT 1991
- HITACHI LTD
US5768194 (A), filed
Wed Jun 07 00:00:00 CDT 1995
, published
Tue Jun 16 00:00:00 CDT 1998
- HITACHI LTD
A single chip semiconductor integrated circuit device having a central processing unit (CPU) and a flash memory which stores data to be processed by the CPU and which provides data to the CPU through the data bus in response to accessing instructions from the...
US6057896 (A), filed
Wed Nov 26 00:00:00 CST 1997
, published
Tue May 02 00:00:00 CDT 2000
- SAMSUNG ELECTRONICS CO LTD
A passivation layer is formed by coating a flowable insulating material on the substrate where a thin film transistor and a storage capacitor electrode, and a pixel electrode is formed on the passivation layer. A portion of the passivation layer is etched...
US4400865 (A), filed
Tue Jul 08 00:00:00 CDT 1980
, published
Tue Aug 30 00:00:00 CDT 1983
- IBM
A self-aligned metal process is decribed which achieves self-aligned metal to silicon contacts and sub-micron contact-to-contact and metal-to-metal spacing. The insulation between the contacts and the metal is a pattern of dielectric material having a...
US5021850 (A), filed
Mon Jul 10 00:00:00 CDT 1989
, published
Tue Jun 04 00:00:00 CDT 1991
- NIPPON PRECISION CIRCUITS
A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer...
US6025622 (A), filed
Thu Jun 25 00:00:00 CDT 1998
, published
Tue Feb 15 00:00:00 CST 2000
- TOKYO SHIBAURA ELECTRIC CO
A conductivity modulated MOSFET, having a semiconductor substrate of a first conductivity type, a semiconductor layer of a second conductivity type formed on the semiconductor substrate and having a high resistance, a base layer of the first conductivity type...
US6518615 (B1), filed
Thu Aug 20 00:00:00 CDT 1998
, published
Tue Feb 11 00:00:00 CST 2003
- MICRON TECHNOLOGY INC
A method and structure for high capacitance memory cells is provided. The method includes forming a trench capacitor in a semiconductor substrate. A self-structured mask is formed on the interior surface of the trench. The interior surface of the trench is...
US5707745 (A), filed
Tue Dec 13 00:00:00 CST 1994
, published
Tue Jan 13 00:00:00 CST 1998
- UNIV PRINCETON
A multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds. The vertical stacked structure is formed on a glass base having a transparent coating of ITO or similar...
USRE38049 (E1), filed
Mon Oct 07 00:00:00 CDT 1996
, published
Tue Mar 25 00:00:00 CST 2003
- MICRON TECHNOLOGY INC
An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The...
US6097077 (A), filed
Fri May 08 00:00:00 CDT 1998
, published
Tue Aug 01 00:00:00 CDT 2000
- QUICKLOGIC CORP
Antifuses and gate arrays with antifuses are disclosed that have high thermal stability, reduced size, reduced leakage current, reduced capacitance in the unprogrammed state, improved manufacturing yield, and more controllable electrical characteristics. Some...
