Patents
Patent data provided by The
European Patent Office
and updated through early 2009. Full text patent data loaded weekly coming soon.
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US3660667 (A), filed
Jun 22, 1970
, published
May 02, 1972
- RCA CORP
An image sensor array of photodetector elements, with two phototransistors at each element. Each phototransistor has emitter, base, and collector regions, with PN junctions between the regions serving as photodetectors which integrate incident light flux. The...
US3700961 (A), filed
Aug 19, 1971
, published
Oct 24, 1972
- NASA
A phototransistor Imaging system employing a mosaic of phototransistors formed on a semiconductor substrate and operated in a charge-storage mode and in which a charge-storage effect occurring between the substrate and an electrical conductor interconnecting...
US4354104 (A), filed
May 06, 1980
, published
Oct 12, 1982
- MATSUSHITA ELECTRIC IND CO LTD
In a solid-state image pickup device of the type in which a photoconductive substance is formed as a photosensor on a scanning device consisting of charge-transfer elements or MOS matrix elements, light shielding means are provided in order to optically shield...
US4369372 (A), filed
Jun 17, 1980
, published
Jan 18, 1983
- CANON KK
This invention provides a photo electro transducer device having a photo electro transducer unit in which plural photo electro transducer elements having light receiving faces are arranged in an array, and a crosstalk preventing unit composed of diode elements...
US4433343 (A), filed
Dec 22, 1981
, published
Feb 21, 1984
- LEVINE MICHAEL A
A relatively thin layer of extrinsic material formed on the top surface of a nearly intrinsic semiconductor substrate forms the detector area of an infrared detector device. A source region is provided along a portion of the perimeter of the detector area and...
US4531055 (A), filed
Jan 05, 1983
, published
Jul 23, 1985
- US AIR FORCE
A two dimensional focal plane array of Schottky photodiodes on a silicon substrate for infrared imaging. The array is designed for mating with multiplexing circuitry and has a self-guarding feature wherein adjacent Schottky electrodes act as guard electrodes....
US4547957 (A), filed
Aug 01, 1984
, published
Oct 22, 1985
- RCA CORP
An imaging device includes a wafer of single crystal semiconductor material having a first surface with an input surfacing region which extends into the wafer from the first surface and a second surface with a charge storage portion which includes a plurality...
US4607168 (A), filed
Jul 06, 1983
, published
Aug 19, 1986
- HITACHI LTD
A photosensor array device comprises a line sensor including a plurality of sets of sensors juxtaposed on a transparent glass substrate. Each set comprises an amorphous silicon photodiode, a crosstalk preventing element in the form of a diode or a transistor...
US4609943 (A), filed
Nov 20, 1984
, published
Sep 02, 1986
- THOMSON CSF
In a device photosensitive to infra-red radiation each infra-red detector is associated with means enabling the injection into a semiconductor substrate of a quantity of charges representing a function of the infra-red radiation received by the detector, and...
US4660089 (A), filed
Jul 22, 1985
, published
Apr 21, 1987
- EASTMAN KODAK CO
In an area image sensor, the on-chip capacitances driven by the sensor photosite elements during sensor readout are made equal. This is accomplished by adjusting the lengths and widths of the conductors (and leads) carrying the output signals so that each...
US4789888 (A), filed
Mar 31, 1981
, published
Dec 06, 1988
- MATSUSHITA ELECTRIC IND CO LTD
In a solid-state image sensor of the type consisting of a semiconductor circuit substrate capable of charge transfer or having the switching function and a photoconductive layer or a photosensor, a pattern of light-shielding checks is formed between the...
US4827117 (A), filed
Apr 13, 1988
, published
May 02, 1989
- NIPPON ELECTRIC CO
US4871921 (A), filed
Aug 09, 1988
, published
Oct 03, 1989
- HONEYWELL INC
Method and apparatus for providing an improved detector array assembly in which the detectors are electrically connected from one substrate to another through adjoining "bump" connections but are prevented from distortion when an epoxy joining the two...
US4894700 (A), filed
Apr 07, 1986
, published
Jan 16, 1990
- FUJI XEROX CO LTD
An elongated image sensor comprises a plurality of light receiving elements of a sandwich structure arranged in a row and wherein a photoconductive layer is sandwiched by a lower electrode and a light-permeable upper electrode. In the image sensor, an...
US4943839 (A), filed
Aug 18, 1988
, published
Jul 24, 1990
- RICOH GEN ELECTRON RES INST
A contact type image sensor has a transparent dielectric substrate, an upper transparent electrode, a lower electrode provided on the transparent dielectric substrate, a semiconductor thin film sandwiched between the upper transparent electrode and the lower...
