Patents
Patent data provided by The
European Patent Office
and updated through early 2009. Full text patent data loaded weekly coming soon.
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US5219771 (A), filed
Sep 18, 1991
, published
Jun 15, 1993
- FUJI XEROX CO LTD
A method of producing on a substrate at least one transistor having electrodes with low interelectrode capacitance, the method characterized by the steps of forming at least one transistor on a substrate, forming a guard conductor on the substrate, forming...
US5891764 (A), filed
Oct 30, 1996
, published
Apr 06, 1999
- SEMICONDUCTOR ENERGY LAB
A laser processing process which comprises laser annealing a silicon film 2 mu m or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or...
US6444508 (B1), filed
Jul 09, 2001
, published
Sep 03, 2002
- NIPPON ELECTRIC CO
In a thin film transistor, a first insulating film on a silicon layer formed in an island on a substrate is smaller in thickness than the silicon layer so that the stepped island edges is gentle in slope to facilitate covering the island with a second...
US6607948 (B1), filed
Aug 24, 2001
, published
Aug 19, 2003
- TOKYO SHIBAURA ELECTRIC CO
A semiconductor device comprises a base substrate, a silicon oxide layer formed on the base substrate, a first semiconductor layer formed on the silicon oxide layer, the first semiconductor layer including an SiGe layer with a Ge concentration not less than 30...
US7041540 (B1), filed
Feb 01, 2005
, published
May 09, 2006
- CHUNGHWA PICTURE TUBES LTD
A thin film transistor includes a substrate, a polysilicon layer, a patterned gate dielectric layer, a gate layer, a channel region, a source region, a drain region, and a LDD region. The polysilicon layer is positioned over the substrate. The patterned gate...
US7071038 (B2), filed
Sep 22, 2004
, published
Jul 04, 2006
- FREESCALE SEMICONDUCTOR INC
A method for forming a semiconductor device ( 10 ) creates a dielectric layer ( 18 ) with high dielectric constant. An interfacial layer ( 14 ) is formed over a semiconductor substrate ( 12 ). A dielectric layer ( 16 ) is formed over the interfacial layer,...
US7071042 (B1), filed
Mar 03, 2005
, published
Jul 04, 2006
- SHARP LAB OF AMERICA INC
A method of fabricating a silicon integrated circuit on a glass substrate includes preparing a glass substrate; fabricating a silicon layer on the glass substrate; implanting ions into the active areas of the silicon layer; covering the silicon layer with a...
US7078276 (B1), filed
Jan 08, 2003
, published
Jul 18, 2006
- KOVIO INC
A method for making nanoparticles, nanoparticle inks and device layers therefrom is disclosed. In accordance with the present invention, nanoparticles are isolated from a composite material that is formed by treating a metal oxide precursor to form the metal...
US7084018 (B1), filed
May 05, 2004
, published
Aug 01, 2006
- ADVANCED MICRO DEVICES INC
A method of reducing buried oxide undercut during FinFET formation includes forming a fin on a buried oxide layer and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes...
US7098090 (B2), filed
Nov 15, 2004
, published
Aug 29, 2006
- FREESCALE SEMICONDUCTOR INC
A method for integrating first and second type devices on a semiconductor substrate includes forming openings within an active semiconductor layer of a dual semiconductor-on-insulator in first and second regions of the semiconductor substrate. First and second...
US7390706 (B2), filed
Nov 30, 2005
, published
Jun 24, 2008
- SAMSUNG ELECTRONICS CO LTD
A method of forming a high quality channel region of a TFT by forming a large size monocrystalline silicon thin film using a patterned metal mask and a grain boundary filtering region is provided. The method includes sequentially stacking a first buffer layer...
US7402470 (B2), filed
Jun 17, 2005
, published
Jul 22, 2008
- LG DISPLAY CO LTD
A thin film transistor array substrate and a fabricating method for simplifying a process and reducing a manufacturing cost. In the thin film transistor array substrate, a gate line is formed on a substrate and a gate insulating film is formed on the gate...
US7402471 (B2), filed
Oct 17, 2005
, published
Jul 22, 2008
- SEMICONDUCTOR ENERGY LAB
A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a...
US7407847 (B2), filed
Mar 31, 2006
, published
Aug 05, 2008
- INTEL CORP
A multi-body thickness (MBT) field effect transistor (FET) comprises a silicon body formed on a substrate. The silicon body may comprise a wide section and a narrow section between the wide section and the substrate. The silicon body may comprise more than one...
US7410840 (B2), filed
Mar 28, 2005
, published
Aug 12, 2008
- TEXAS INSTRUMENTS INC
A method ( 10 ) of forming fully-depleted silicon-on-insulator (FD-SOI) transistors ( 150 ) and bulk transistors ( 152 ) on a semiconductor substrate ( 104 ) as part of an integrated circuit fabrication process is disclosed.
