Thin film transistor having pixel electrode connected to a laminate structure - Patent US6608353(B2)

Filed: Jul 12, 2002

Published: Aug 19, 2003

Abstract

An electronic circuit formed on an insulating substrate and having thin-film transistors (TFTs) comprising semiconductor layers. The thickness of the semiconductor layer is less than 1500 Å, e.g., between 100 and 750 Å. A first layer consisting mainly of titanium and nitrogen is formed on the semiconductor layer. A second layer consisting of aluminum is formed on top of the first layer. The first and second layers are patterned into conductive interconnects. The bottom surface of the second layer is substantially totally in intimate contact with the first layer. The interconnects have good contacts with the semiconductor layer.

Applicants

SEMICONDUCTOR ENERGY LAB

Inventors

MIYAZAKI MINORU
MURAKAMI AKANE
YAMAMOTO MUTSUO
CUI BAOCHUN

Application Number

10193162

Priority Claims

US16235793

Family Members

US2002179969(A1) - Electronic circuit

US6608353(B2) - Thin film transistor having pixel electrode connected to a laminate structure

Classification Codes

H01L29/40, H01L23/532, G02F1/13, H01L27/12, H01L21/84, H01L23/52, H01L21/77, G02F1/1368, H01L21/70, H01L29/45