Method for forming a storage cell capacitor compatible with high dielectric constant materials - Patent US5478772(A)

Filed: Feb 17, 1995

Published: Dec 26, 1995

Abstract

The invention is a storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide/nitride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. The barrier layer is formed in the recess. The process is then continued with a formation of an oxidation resistant conductive layer and the patterning thereof to complete the formation of the storage node electrode. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.

Applicants

MICRON TECHNOLOGY INC

Inventors

FAZAN PIERRE C

Application Number

390336

Priority Claims

US4433193

Family Members

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US5392189(A) - Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same

US5478772(A) - Method for forming a storage cell capacitor compatible with high dielectric constant materials

Classification Codes

H01L21/8246, H01L27/115, H01L21/02, H01L21/8242, H01L21/70, H01L21/768