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Semiconductor memory device having diagnostic circuit for comparing multi-bit read-out test data signal with multi-bit write-in test data signal stored in serial-input shift register - Patent US5406566(A)

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Filed: Oct 22, 1993
Published: Apr 11, 1995

Abstract

A dynamic random access memory device is subjected to a diagnosis upon completion of fabrication to see whether or not a defective memory cell is incorporated in memory cell sub-arrays, one of the input/output data buffer circuits incorporated therein transfers test bits in serial to a shift register which in turn transfers the test bits in parallel to data line pairs for writing the test bits into the memory cell sub-arrays, and a comparator compares the test bits read out from the memory cell sub-arrays with the test bit stored in the shift register for producing a diagnostic signal indicative of consistence or inconsistence between the test bits read out from the memory cell sub-arrays and the test bits in the shift register, thereby allowing an external diagnostic system with data pins less than the input/output data buffer circuits to carry out the diagnosis.

Applicants

  • NIPPON ELECTRIC CO

Inventors

  • OBARA TAKASHI

Application Number

139717

Priority Claims

JP28722992

Family Members

JP6139798(A) - SEMICONDUCTOR MEMORY
US5406566(A) - Semiconductor memory device having diagnostic circuit for comparing multi-bit read-out test data signal with multi-bit write-in test data signal stored in serial-input shift register
JP2768175(B2) -

Classification Codes

G11C29/38, G11C29/00, G11C29/34, G11C29/04, G11C29/32, G01R31/28
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