Method for measuring interstitial oxygen concentration - Patent US5287167(A)

Filed: Jul 31, 1991

Published: Feb 15, 1994

Abstract

The invention related to a method for determining a silicon wafer in which the interstitial oxygen concentration of a pulled silicon wafer is calculated on the basis of a light transmission characteristic measured by utilizing parallel polarized light incident at the brewster angle into the pulled silicon wafer and a further light transmission characteristic measured by utilizing parallel polarized light incident at the brewster angle into the floating zone silicon wafer function as a reference silicon wafer. The interstitial oxygen concentration value of the pulled silicon wafer is compared with a reference value to determine a defect in pulled silicon wafer.

Applicants

TOSHIBA CERAMICS CO

Inventors

WATANABE MIKIO
TAKASU SHINICHIRO
SHIRAI HIROSHI

Application Number

738043

Priority Claims

JP22745790

Family Members

EP0469572(A2) - A method measuring interstitial oxygen concentration.

EP0469572(A3) - A METHOD MEASURING INTERSTITIAL OXYGEN CONCENTRATION

US5287167(A) - Method for measuring interstitial oxygen concentration

DE69130245(D1) - Verfahren zum Messen der Zwischengittersauerstoffkonzentration

KR156939(B1) - METHOD OF MEASURING INTERSTITIAL OXYGEN CONCENTRATION

DE69130245(T2) - Verfahren zum Messen der Zwischengittersauerstoffkonzentration

Classification Codes

G01N21/84, G01N21/35, G01N21/31