Thin film transistor and method of manufacturing the same - Patent US5032883(A)

Filed: Sep 07, 1988

Published: Jul 16, 1991

Abstract

A TFT of the present invention includes a transparent insulative substrate, a gate electrode formed on the substrate, a gate insulating film formed on at least the gate electrode, a semiconductor film formed at a position on the gate insulating film corresponding to the gate electrode, source and drain electrodes arranged on the semiconductor film so as to form a channel portion, a transparent insulating film covering the source and drain electrodes and the semiconductor film, and a transparent electrode connected to the source electrode. A through hole is formed in the transparent insulating film above the source electrode. The transparent electrode is formed on a portion of the transparent insulating film except for a portion above the channel portion on the semiconductor film.

Applicants

CASIO COMPUTER CO LTD

Inventors

SATO SYUNICHI
WAKAI HARUO
YAMAMURA NOBUYUKI
KANBARA MINORU

Application Number

241304

Priority Claims

JP24887887

Family Members

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Classification Codes

G02F1/13, G02F1/1368, H01L27/12, G02F1/1333, H01L29/786, H01L29/66, G02F1/1362