Filed: Dec 04, 1987

Published: May 23, 1989

Abstract

The fabrication of high performance and reliable Buried Channel Field Effect Transistor (BCFET) using Schottky gate junction and heavily doped N layers for the source and drain electrode is described. The BCFET is composed of a semi-insulating substrate in which two N layers for the drain electrodes and one N layer for the source electrode are formed in one of the semi-insulating surface. The N source electrode is centrally located between the two N drain electrodes and all three lie in the same plane. The source and drain electrodes are separated by a thin semi-insulating layer, the length of which can range from 0.5 micron to several micron range, depending on the desired voltage breakdown. A Schottky gate is defined in an active N layer directly above the source N Layer. The ohmic contacts for the source and drain N layers are defined several microns away from the schottky junction, resulting in a considerable improvement in device reliability. Reliability is further enhanced by the fact that the resulting device is buried within the material where it is insulated from the ambient.

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Classification Codes

H01L29/02, H01L29/40, H01L29/417, H01L29/812, H01L29/08, H01L23/48, H01L21/70, H01L29/66, H01L21/768