Method of forming semiconducting materials and barriers - Patent US4226897(A)
Filed:
Dec 05, 1977
Published:
Oct 07, 1980
Abstract
In a gaseous glow-discharge process for coating a substrate with semiconductor material, a variable electric field in the region of the substrate and the pressure of the gaseous material are controlled to produce a uniform coating having useful semiconducting properties. Electrodes having concave and cylindrical configurations are used to produce a spacially varying electric field. Twin electrodes are used to enable the use of an AC power supply and collect a substantial part of the coating on the substrate. Solid semiconductor material is evaporated and sputtered into the glow discharge to control the discharge and improve the coating. Schottky barrier and solar cell structures are fabricated from the semiconductor coating. Activated nitrogen species is used to increase the barrier height of Schottky barriers.Applicants
-
PLASMA PHYSICS CORP
Inventors
-
COLEMAN JOHN H
Application Number
857690Priority Claims
US85769077Family Members
EP0002383(A1) -
Procédé et dispositif pour le dépÔt de couches de matériaux semi-conducteurs ou autres.
AU4216578(A) -
DEPOSITING SEMICONDUCTOR AND OTHER FILSM
JP54091048(A) -
METHOD OF AND DEVICE FOR ACCUMULATING THIN FILMS
ZA7806772(A) -
METHOD AND APPARATUS FOR DEPOSITING SEMICONDUCTOR AND OTHER FILMS
US4226897(A) -
Method of forming semiconducting materials and barriers
US4330182(A) -
Method of forming semiconducting materials and barriers
EP0002383(B1) -
METHOD AND APPARATUS FOR DEPOSITING SEMICONDUCTOR AND OTHER FILMS
DE2861977(D1) -
METHOD AND APPARATUS FOR DEPOSITING SEMICONDUCTOR AND OTHER FILMS
AU524505(B2) -
DEPOSITING SEMICONDUCTOR AND OTHER FILSM
US4330182(B1) -
Method of forming semiconducting materials and barriers
Classification Codes
H01L31/18, C30B25/06, C23C16/509, H01L31/04, H01L31/72, H01J37/32, H01L31/20, C23C16/50, H01L31/75, H01L31/00, H01L21/205, H01L21/02, H01L21/302, C23C16/503, H01L31/06
